? 2004 ixys all rights reserved s g s d minibloc, sot-227 b (ixfn) e153432 features ? international standard package ? encapsulating epoxy meets ul 94 v-0, flammability classification ? minibloc with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? synchronous rectification ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls ? low voltage relays advantages ? easy to mount ? space savings ? high power density g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 20v, v gs = 0v 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 23n100 0.43 ? note 2 24n100 0.39 ? 98597e (12/04) hiperfet tm power mosfet single mosfet die symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 24n100 24 a 23n100 23 a i dm t c = 25 c; note 1 24n100 96 a 23n100 92 a i ar t c = 25 c 24 a e ar t c = 25 c 60 mj e as t c = 25 c 3 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 600 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g v dss i d25 r ds(on) ixfn 24n100 1000 v 24 a 0.39 ? ? ? ? ? ixfn 23n100 1000 v 23 a 0.43 ? ? ? ? ? t rr 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , note 2 15 22 s c iss 7000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 750 pf c rss 260 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 35 ns t d(off) r g = 1 ? (external), 75 n s t f 21 ns q g(on) 250 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 nc q gd 135 nc r thjc 0.21 k/w r thck 0.05 k/w source-drain diode (t j = 25 c, unless otherwise specified) characteristic values symbol test conditions min. typ. max. i s v gs = 0 24n100 24 a 23n100 23 a i sm repetitive; 24n100 96 a pulse width limited by t jm 23n100 92 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 n s q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 1.0 c i rm 8 a m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b notes: 1. pulse width limited by t jm. 2. pulse test, t 300 ms, duty cycle d 2 %. ixfn 23n100 ixfn 24n100 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2004 ixys all rights reserved v ds - volts 0246810 i d - amperes 0 5 10 15 20 v ds - volts 0 4 8 12 16 20 i d - amperes 0 4 8 12 16 20 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v gs - volts 345678 i d - amperes 0 5 10 15 20 v ce - volts 0 5 10 15 20 25 i d - amperes 0 10 20 30 40 50 6v 5v v gs = 8-10v t j = 25 c v gs = 10v 9v 8v t j = 25 c 5v t j = 125 c 6v 7v 5v 6v v gs = 10v 9v 8v t j = 125 o c v gs = 10v i d = 24a i d = 12a t j = 25 o c 7v 7v figure 1. output characteristics at 25 o c figure 2. extended output characteristics at 125 o c figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 5. r ds(on) normalized to 0.5 i d25 value vs. t j figure 4. admittance curves ixfn 23n100 ixfn 24n100
ixys reserves the right to change limits, test conditions, and dimensions. v sd - volts 0.0 0.5 1.0 1.5 2.0 2.5 i d - amperes 0 10 20 30 40 50 case temperature - o c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 30 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.010 0.100 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 gate charge - nc 0 50 100 150 200 250 300 350 v gs - volts 0 3 6 9 12 15 crss coss ciss v ds = 500 v i d = 12 a i g = 10 ma f = 1mhz t j = 125 o c t j = 25 o c 0.300 20000 figure 6. gate charge figure 7. capacitance curves figure 8. forward voltage drop of the intrinsic diode figure9. drain current vs. case temperature figure 10. transient thermal resistance ixfn 23n100 ixfn 24n100
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